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-rw-r--r--flash.h10
1 files changed, 5 insertions, 5 deletions
diff --git a/flash.h b/flash.h
index a14c3029..6e86c354 100644
--- a/flash.h
+++ b/flash.h
@@ -119,11 +119,12 @@ enum write_granularity {
#define FEATURE_WRSR_EITHER (FEATURE_WRSR_EWSR | FEATURE_WRSR_WREN)
#define FEATURE_OTP (1 << 8)
#define FEATURE_QPI (1 << 9)
-#define FEATURE_4BA_SUPPORT (1 << 10)
-#define FEATURE_4BA_EXT_ADDR (1 << 11) /**< Regular 3-byte operations can be used by writing the most
+#define FEATURE_4BA_ENTER (1 << 10) /**< Can enter/exit 4BA mode with instructions 0xb7/0xe9 w/o WREN */
+#define FEATURE_4BA_ENTER_WREN (1 << 11) /**< Can enter/exit 4BA mode with instructions 0xb7/0xe9 after WREN */
+#define FEATURE_4BA_EXT_ADDR (1 << 12) /**< Regular 3-byte operations can be used by writing the most
significant address byte into an extended address register. */
-#define FEATURE_4BA_READ (1 << 12) /**< Native 4BA read instruction (0x13) is supported. */
-#define FEATURE_4BA_WRITE (1 << 13) /**< Native 4BA byte program (0x12) is supported. */
+#define FEATURE_4BA_READ (1 << 13) /**< Native 4BA read instruction (0x13) is supported. */
+#define FEATURE_4BA_WRITE (1 << 14) /**< Native 4BA byte program (0x12) is supported. */
enum test_state {
OK = 0,
@@ -205,7 +206,6 @@ struct flashchip {
int (*unlock) (struct flashctx *flash);
int (*write) (struct flashctx *flash, const uint8_t *buf, unsigned int start, unsigned int len);
int (*read) (struct flashctx *flash, uint8_t *buf, unsigned int start, unsigned int len);
- int (*set_4ba) (struct flashctx *flash);
struct voltage {
uint16_t min;
uint16_t max;